1 January 1992 Moss-Burstein shift in infrared materials under different physical conditions
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56625
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
In this paper an attempt is made to study the Moss-Burstein shift in quantum wells, quantum well wires, quantum dots, inversion layers, magnetic quantization, magneto-size quantization and magneto-inversion layers in infrared compounds,by formulating the appropriate electron statistics, it is found, taking Hg, Cd Te as an example, that the Moss—Burstein shift exhibits oscillation of various manners for the said quantum confinements of the band states with respect to electron statisties, film thickness and magnetic field respectively. The oscillations are totally band-structure dependent and the theoretical analysis is in agreement with the experimental results as given elsewhere. in addition, the well-known results for relatively wide bandyap materials have also been obtained as special cases of our generalized analysis.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kamakhya Prasad Ghatak, Kamakhya Prasad Ghatak, } "Moss-Burstein shift in infrared materials under different physical conditions", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56625; https://doi.org/10.1117/12.56625

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