1 January 1992 Novel microspot dielectric film thickness measurement system
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56646
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
The semiconductor industry is moving towards thinner dielectric films (less than 100 angstroms), more complex film structures (oxide on polysilicon on oxide on silicon) and smaller lateral geometries (less than 1 micron). The attendant measurement requirements demand more than incremental improvement of existing methods. In this paper, a novel laser-based dielectric film measurement system is described that meets these requirements by bridging the gap between spectrophotometer speed and ellipsometer precision while measuring with a 0.9 micron focused laser spot. The operating principles of a new technique which we call Beam Profile Reflectometry are discussed and data are presented for a number of different single- and multi-layer film structures relevant to microelectronics processing.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Willenborg, Susan M. Kelso, Jon L. Opsal, Jeffrey T. Fanton, Allan Rosencwaig, "Novel microspot dielectric film thickness measurement system", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56646; https://doi.org/10.1117/12.56646
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