Optical emission spectroscopy as a process monitor for triod ion plating with TiN

Mohamed Boumerzoug; Peter Mascher; Douglas R. Nagy

doi:10.1117/12.56653

1 January 1992 Optical emission spectroscopy as a process monitor for triod ion plating with TiN

Mohamed Boumerzoug, Peter Mascher, Douglas R. Nagy

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56653
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The deposition of TiN on a silicon substrate in a Triode Ion Plating (TIP) deposition system was investigated. The effects of the deposition parameters such as the pressure, electron beam current and the gas flow rates were studied by looking at the optical emission lines collected through an Optical Emission Spectrometer (OES). Two kinds of spectra were recorded: Scan spectra between 200 and 600 nm for the identification of the species in the plasma and time based spectra for monitoring the titanium and nitrogen emission lines. The deposition rate was also monitored in situ by using a crystal thickness monitor. Secondary Ion Mass Spectrometry (SIMS) profiling was used to analyse the distribution of Ti and N in the deposited films. It was found that OES can be used for the in situ monitoring of the deposition process. Moreover, the titanium emission line at 364.2 nm can be used to correct the fluctuation in the titanium evaporation rate.

Citation Download Citation

Mohamed Boumerzoug, Peter Mascher, and Douglas R. Nagy "Optical emission spectroscopy as a process monitor for triod ion plating with TiN", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56653

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