1 January 1992 Single-wafer high-pressure oxidation
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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56622
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Cluster tool demands on oxidation process for device fabrication leads to requirement of single wafer high pressure hot process tool. A joint development project between GaSonics/IPC and Texas Instruments has produced a working tool capable of delivering high quality oxides and excellent reflow performance to meet the future needs of the industry.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles A. Boitnott, David R. Craven, "Single-wafer high-pressure oxidation", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56622; https://doi.org/10.1117/12.56622
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