In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems

Thomas E. Metz; Richard N. Savage; Horace O. Simmons

doi:10.1117/12.56629

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1 January 1992 In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems

Thomas E. Metz, Richard N. Savage, Horace O. Simmons

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Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56629
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

This paper will explore the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry. Reflected light from the wafer’s surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recognition algorithm. The instrumentation used to make this measurement and its application towards optimizing track performance during spin-coating and bake will be discussed. Data demonstrating basic thickness versus spin-time and thickness versus bake-time profiles acquired on-line without process disruption will be presented along with its utilization towards minimizing process set-up and machine qualification. Moreover, the advantages of characterizing film thickness on-line and in real-time will be reviewed.

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Thomas E. Metz, Richard N. Savage, and Horace O. Simmons "In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56629

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