1 February 1992 Application of modern quality improvement techniques to rapid thermal processing
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Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56661
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Modem statistical modeling techniques are applied to the characterization and optimization of Rapid Thermal Chemical Vapor Deposition. The problems of deposition during process ramps and thickness uniformity modeling wafer are addressed. A two-phase fractional factorial experimental design is used to generate models for the deposition rate, uniformity measures, and normalized time responses. A constrained algebraic optimization algorithm is used to find the optimum settings for the reactor for the deposition of 2000A of polysilicon. The methods that are developed to handle these problems are shown in an application to the deposition of polysilicon in a LeiskTM reactor.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph C. Davis, Joseph C. Davis, Ronald S. Gyurcsik, Ronald S. Gyurcsik, Jeng-Chang Lu, Jeng-Chang Lu, Richard H. Perkins, Richard H. Perkins, } "Application of modern quality improvement techniques to rapid thermal processing", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56661; https://doi.org/10.1117/12.56661
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