Chemically modified ultrathin oxides fabricated by rapid thermal processing

Atul B. Joshi; G. Q. Lo; J. Ahn; Windsor Ting M.D.; Dim-Lee Kwong

doi:10.1117/12.56674

1 February 1992 Chemically modified ultrathin oxides fabricated by rapid thermal processing

Atul B. Joshi, G. Q. Lo, J. Ahn, Windsor Ting M.D., Dim-Lee Kwong

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56674
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A comprehensive review of chemical composition and electrical properties is presented for thin gate oxides with small amounts of nitrogen or fluorine, incorporated by rapid thermal processing. Electrical properties of these chemically modified oxides are correlated with the changes in chemical composition and the resulting structural modifications. Qualitative models described in some of the earlier works are used to establish these correlations. It is concluded that the changes in chemical composition of Si02 can be controlled to realize superior gate dielectrics for application in ULSI MOS devices.

Citation Download Citation

Atul B. Joshi, G. Q. Lo, J. Ahn, Windsor Ting M.D., and Dim-Lee Kwong "Chemically modified ultrathin oxides fabricated by rapid thermal processing", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56674

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