In-situ characterization of SiO2 deposition and growth for gate-oxides

Michael Liehr

doi:10.1117/12.56673

1 February 1992 In-situ characterization of SiO₂ deposition and growth for gate-oxides

Michael Liehr

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56673
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The use of Si02 gate oxides with thicknesses of <100A will put stringent requirements on the control of contamination during device manufacturing. It has been realized only recently that control of molecular contamination is as important for critical device films as control of particulates. We present in this paper an investigation of challenges of thin gate oxides, possible alternative oxide deposition schemes, and control of foreign molecular species. using an ultra-clean, integrated processing system with in-situ analysis capabilities. In particular, the interfacial region of thermal gate oxides is investigated, as well as the chemical vapor deposition of oxides from SiH4 and 02 , and the incorporation of fluorine into gate oxides.

Citation Download Citation

Michael Liehr "In-situ characterization of SiO₂ deposition and growth for gate-oxides", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56673

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