Oxidation of hydrogen silsesquioxane, (HSiO3/2)n, by rapid thermal processing

Theresa E. Gentle

doi:10.1117/12.56672

1 February 1992 Oxidation of hydrogen silsesquioxane, (HSiO_3/2)_n9, by rapid thermal processing

Theresa E. Gentle

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56672
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

At Dow Corning Corporation, hydrogen silsesquioxane, (HSi03/2)n. is being commercialized as a precursor to silica coatings for applications in the protection of electronic devices and as an interlayer dielectric layer in the fabrication of integrated circuits. Rapid Thermal Processing (RTP) has been used to convert hydrogen silsesquioxane to silica at temperatures as low as 400 °C with minimal to no adverse effects to temperature sensitive integrated circuits. The resulting silica films had lower mechanical stress and better chemical homogeneity than films processed in a conventional furnace using the same precursor and temperatures. Two different RTP units, one employing an arc lamp and the other with tungsten-halogen lamps, gave comparable results.

Citation Download Citation

Theresa E. Gentle "Oxidation of hydrogen silsesquioxane, (HSiO_3/2)_n9, by rapid thermal processing", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56672

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