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1 February 1992 Review of rapid thermal processing: system design and applications
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Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56659
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Issues of rapid thermal processing (RTP) system design and process applications are reviewed. Temperature measurement is the most important and limiting factor in current RTP systems. Problems related to the temperature measurement and control and potential solutions are discussed. Process uniformity control is another important issue in RTP system design. Reactor chamber design, selection and arrangement of heat source, as well as issues related to dislocation generation, patterned and doped wafer, and ramp-up (down) thennal cycle are considered. Experimental results (RTO, RTCVD silicon nitride and polysilicon) based on an in-house RTP system developed in our laboratory are taken as examples to demonstrate the process applications and system requirements for single wafer processing.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao-Li Xu, Jim J. Wortman, Mehmet C. Ozturk, and Furman Yates Sorrell "Review of rapid thermal processing: system design and applications", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56659
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