1 February 1992 Uniformity characterization of rapid thermal processor thin films
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Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56665
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
This paper will continue a review of the presently available whole-wafer mapping techniques and discuss their applicability to uniformity characterization of various rapid thermal processor (RTP) thin films. These techniques include spectral analysis, beam profile reflectometry, modulatedoptical reflectance, Fourier Transform Infrared Spectrometry (FTIR), four-point probe, reflective-optical inspection, x-ray topography (XRT), wafer flatness and stress. Selected contour and uniformity maps resulting from analysis of rapid thermal oxidation (modulated-optical reflectance, wafer thickness and stress measurements) and epi-silicon (reflective-optical inspection) RTP thin films will be presented. Comparisons between two different thin film thickness measurement technologies will be discussed
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles B. Yarling, Charles B. Yarling, Dawn-Marie Cook, Dawn-Marie Cook, } "Uniformity characterization of rapid thermal processor thin films", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56665; https://doi.org/10.1117/12.56665
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