Electromigration physical modeling of failure in thin film structures

James R. Lloyd

doi:10.1117/12.51016

1 December 1991 Electromigration physical modeling of failure in thin film structures

James R. Lloyd;

Author Affiliations +

Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51016
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Electromigration failure in thin film conductors is described. The state of the art in understanding is discussed and the results of new efforts in modeling this important failure mechanism are presented.

Citation Download Citation

James R. Lloyd, "Electromigration physical modeling of failure in thin film structures", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51016; https://doi.org/10.1117/12.51016

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years