Electromigration physical modeling of failure in thin film structures

James R. Lloyd

doi:10.1117/12.51016

1 December 1991 Electromigration physical modeling of failure in thin film structures

James R. Lloyd

Author Affiliations +

Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51016
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Electromigration failure in thin film conductors is described. The state of the art in understanding is discussed and the results of new efforts in modeling this important failure mechanism are presented.

Citation Download Citation

James R. Lloyd, James R. Lloyd, } "Electromigration physical modeling of failure in thin film structures", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51016; https://doi.org/10.1117/12.51016

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