1 December 1991 Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy
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Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51018
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
A Focussed Ion beam Microscope has been used to image the grains as well voids formed in Al- 1%Cu/TiW fine line conductors . Void formation has been compared between laser annealed Al and non laser annealed Al and it has been shown that the laser annealed Al is more prone to voiding. A TiW layer placed over the Al is effective in suppressing the voids.
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Dipankar Pramanik, Vivek Jain, "Observation of stress voids and grain structure in laser-annealed aluminum using focused ion-beam microscopy", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51018; https://doi.org/10.1117/12.51018
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