Paper
1 December 1991 Some fundamental issues on metallization in VLSI
David K. Ferry, Michael N. Kozicki, Gregory B. Raupp
Author Affiliations +
Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51006
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Metallization, and conductor systems in general, are a critical part of any VLSI chip, and as such can act to set limits on future down-scaling of such integrated circuits. Due to decreasing lateral and vertical dimensions, interconnections are rapidly becoming a problem in terms of device yield, reliability, signal delay time, and inter-device interactions. In this paper, we discuss how interconnection limitations will affect the scaling of advanced circuits. We will also cover a number of issues regarding the interconnection technologies that will be required in future ULSI circuits. The problems with conductor systems begin with the interconnection topology which provides constraints and limitations. The physical problems then begin with the deposition of the materials. For example, chemical vapor deposition of metal or metal-silicide interconnects causes several unique concerns due to surface chemistry, leading to undersirable reactions and compositional and structural nonuniformities. Similarly, factors such as control of step coverage are important for reduced geometries. Recent experiments and modeling techniques which address these problems will therefore be described. Lithographical aspects also pose problems in the scaling of metal lines and new pattern definition techniques will be discussed. Finally, isolation of information within dense crossing interconnects can become very difficult, with coupling causing degradation of information within localized devices.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David K. Ferry, Michael N. Kozicki, and Gregory B. Raupp "Some fundamental issues on metallization in VLSI", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); https://doi.org/10.1117/12.51006
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Cited by 3 scholarly publications.
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KEYWORDS
Tungsten

Metals

Silicon

Very large scale integration

Capacitors

Chemistry

Resistance

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