Technique of assessing contact ohmicity and their relevance to heterostructure devices

H. Barry Harrison; Geoffrey K. Reeves

doi:10.1117/12.51011

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1 December 1991 Technique of assessing contact ohmicity and their relevance to heterostructure devices

H. Barry Harrison, Geoffrey K. Reeves

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Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51011
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

This paper briefly reviews techniques to assess and model ohmic contacts between layers with finite conductivity. It is then extended to consider aspects of these models that are applicable to multilayer structures such as those found in high electron mobility transistors [HEMTS] and provides electrical models for these structures. Experimental results are included in some instances to provide insight into the magnitude of the parameters of the models.

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H. Barry Harrison and Geoffrey K. Reeves "Technique of assessing contact ohmicity and their relevance to heterostructure devices", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); https://doi.org/10.1117/12.51011

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