Paper
1 December 1991 Unframed via interconnection of nonplanar device structures
Manjin J. Kim
Author Affiliations +
Proceedings Volume 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI; (1991) https://doi.org/10.1117/12.51007
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Multilevel metallization is an indispensable requirement for dense VLSI or ULSI because each additional level can significantly reduce the chip size. Multi-device integration is another trend for higher on-chip performance in which many different device structures, including non-planar trench structures, are fabricated from different material.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manjin J. Kim "Unframed via interconnection of nonplanar device structures", Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); https://doi.org/10.1117/12.51007
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KEYWORDS
Metals

Etching

Oxides

Tungsten

Dielectrics

Very large scale integration

Sputter deposition

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