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1 March 1992 All-YBa2C U30 7-x edge-geometry weak links
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Abstract
High quality YBa2Cu3O7-x/normal-metal/YBa2Cu3O7-x edge-geometry weak links have been fabricated with high yield using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25- 100 Å thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction (RSJ) model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness, ranging from ~5 x 103 to 5 x 105 A/cm2, indicating an effective normal metal coherence length of 20 A. In addition, the average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 -T/Tc)2.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. D. Hunt "All-YBa2C U30 7-x edge-geometry weak links", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321827
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