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1 March 1992 High-Tc field-effect transistor-like structure made from YBCO ultrathin films
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Abstract
A high-Tc field-effect transistor-like structure (SuFET) was made which consisted of an ultrathin YBa2Cu3O7-x (YBCO) film, a dielectric SrTiO3 layer and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and Tc. The Jc of the channel layer was changed by ~90% when a gate voltage was applied, showing the promise to build a field-effect device using high-Tc superconductors.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. X. Xi "High-Tc field-effect transistor-like structure made from YBCO ultrathin films", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321828
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