1 December 1991 Dynamics of the optical parameters of molten silicon during nanosecond laser annealing
Author Affiliations +
Proceedings Volume 1598, Lasers in Microelectronic Manufacturing; (1991) https://doi.org/10.1117/12.51028
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
The behavior of the reflectivity of a Si single crystal during irradiation with two successive Nd:YAG pulses is investigated with ns resolution. The first pulse melts the surface, and therefore the reflection coefficient increases to the value of the metallic liquid at the melting temperature. Upon further heating of the surface with the second pulse, we observe a decrease of the reflection coefficient, resulting from the temperature dependent dielectric function of the molten Si. The largest decrease in the reflectivity that could be reached before damaging the surface amounted to 9% for both wavelengths 633 nm and 488 nm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johannes Boneberg, Johannes Boneberg, Oguz Yavas, Oguz Yavas, B. Mierswa, B. Mierswa, Paul Leiderer, Paul Leiderer, "Dynamics of the optical parameters of molten silicon during nanosecond laser annealing", Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); doi: 10.1117/12.51028; https://doi.org/10.1117/12.51028


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