1 December 1991 Laser drilling vias in GaAs wafers
Author Affiliations +
Proceedings Volume 1598, Lasers in Microelectronic Manufacturing; (1991) https://doi.org/10.1117/12.51032
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
A new approach to drilling GaAs substrate vias in a production environment is described. Rapid drilling of vias in thinned wafers has been achieved with a frequency doubled Nd:YAG laser. A description of the equipment, laser parameters, and process is given. Production results are also shown.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan Riley, Susan Riley, Larry A. Schick, Larry A. Schick, } "Laser drilling vias in GaAs wafers", Proc. SPIE 1598, Lasers in Microelectronic Manufacturing, (1 December 1991); doi: 10.1117/12.51032; https://doi.org/10.1117/12.51032


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