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1 February 1992 Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings
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Proceedings Volume 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine; (1992) https://doi.org/10.1117/12.2322278
Event: Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, 1991, New York, NY, United States
Abstract
The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron-phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keith R. Wald "Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings", Proc. SPIE 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, (1 February 1992); https://doi.org/10.1117/12.2322278
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