Paper
1 February 1992 Hot carrier dynamics in a K≠0 satellite valley in AlxGa1-xAs
W. B. Wang
Author Affiliations +
Proceedings Volume 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine; (1992) https://doi.org/10.1117/12.2322271
Event: Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, 1991, New York, NY, United States
Abstract
Hot electrons in Al 0.6Ga 0.4 As were produced in the X 6 valley from a photoexcited indirect iransition by a 585nm femtosecond pump pulse. The time evolution of the population of electrons in the bottom of the X 6 valley was monitored by a femtosecond infrared probe pulse. The importance of the L 6?X 6 intervalley scattering for the relaxation process of hot carriers was investigated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. B. Wang "Hot carrier dynamics in a K≠0 satellite valley in AlxGa1-xAs", Proc. SPIE 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, (1 February 1992); https://doi.org/10.1117/12.2322271
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KEYWORDS
Absorption

Electrons

Scattering

Aluminum

Gallium arsenide

Infrared radiation

Carrier dynamics

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