1 January 1992 Printability of pellicle defects in DUV 0.5-um lithography
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An image simulation program was developed and the corresponding experiment was performed to study the printability of particle on pellicle or pellicle defect for a DUV (X = 248 nm) stepper exposure. As an application of the program, we calculated the printability of pellicle defects for pellicles on both sides of the mask as a function of light source wavelength, numerical aperture, pellicle stand off distance, partial coherence, mask pattern feature size, defocus, etc. The results showed that at 248 nm wavelength exposure the change of aerial image at the wafer plane induced by the chrome side pellicle defect was larger than that of g-line (X=436 nm) or Mine exposure (X=365 nm). Simulation for a given pellicle defect size, placed at different side of mask indicated that glass side defect gave a larger change on the aerial image in terms of loss of image energy, and smaller change in terms of decrease in modulation transfer function (MTF) than that of chrome side. Experimental results performed on our DUV stepper substantiated the simulation results.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-yang Yan, Pei-yang Yan, Michael S. Yeung, Michael S. Yeung, Henry T. Gaw, Henry T. Gaw, } "Printability of pellicle defects in DUV 0.5-um lithography", Proc. SPIE 1604, 11th Annual BACUS Symposium on Photomask Technology, (1 January 1992); doi: 10.1117/12.56939; https://doi.org/10.1117/12.56939

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