1 January 1992 Specifying phase-shift mask image quality parameters
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The mask contribution to overall lithography error budgets historically has been specified to very tight levels. Phase shift masks (PSMs) present new conditions affecting wafer image quality. In this paper we will examine the new effects of PSM dimensional variations on key wafer image parameters such as critical dimension tolerance and registration. An important distinction among alternative phase shift mask strategies is different dependency levels of wafer image quality to imperfections in phase shift mask structures. Test patterns representing several types of PSM types, Alternating, Rim, Sub-resolution, Edge, and Chromeless have been fabricated with the CORE-2564PSM and wafers have been exposed from them. We will present PSM-to-wafer sensitivity results for these PSM strategies, and will propose error budget modelling factors for PSM specification.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter D. Buck, Peter D. Buck, Michael L. Rieger, Michael L. Rieger, } "Specifying phase-shift mask image quality parameters", Proc. SPIE 1604, 11th Annual BACUS Symposium on Photomask Technology, (1 January 1992); doi: 10.1117/12.56954; https://doi.org/10.1117/12.56954


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