1 February 1992 Reliability of ridge waveguide GaInAsP/InP laser
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Proceedings Volume 1620, Laser Testing and Reliability; (1992) https://doi.org/10.1117/12.56859
Event: SPIE Technical: OPTCON '91, 1991, San Jose, CA, United States
Application of semiconductor lasers in fiber-in-the-loop systems, where device temperatures would not be controlled and might vary from -40 degree(s)C to 85 degree(s)C, has brought new challenges in laser reliability requirements. Also, lifetime assessment of lasers for the loop applications becomes increasingly more difficult as conventional constant power accelerated life test at 50 degree(s)C to 100 degree(s)C impose insufficient levels of stress. By studying comparatively the degradation behavior of different device structures, we have shown that the ridge waveguide laser structure may have potential for meeting the reliability requirement for such applications. Constant current stressing of the ridge waveguide laser at elevated temperatures of 150 degree(s)C to 200 degree(s)C indicated that the device degradation rate follows well-behaved log-normal distribution with standard deviation of 0.5. The activation energy determined from the experimental results was found to be about 0.88 eV. Projected laser MTTF at room temperature operation exceeds 107 hours, which is also in good agreement with results obtained from constant power life test at 50 degree(s), 70 degree(s), and 95 degree(s)C.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. F. Postolek, H. F. Postolek, Tibor F. Devenyi, Tibor F. Devenyi, M. Havelock, M. Havelock, Cornelis Blaauw, Cornelis Blaauw, Cheryl M. Maritan, Cheryl M. Maritan, George K. D. Chik, George K. D. Chik, } "Reliability of ridge waveguide GaInAsP/InP laser", Proc. SPIE 1620, Laser Testing and Reliability, (1 February 1992); doi: 10.1117/12.56859; https://doi.org/10.1117/12.56859

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