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16 December 1992 Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636952
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
- The diffusion coefficient of interdiffusion in InGaAs/GaAs strained quantum wells has been determined as a function of time following implantation with gallium arsenic and krypton ions. All implants were shown to produce some collisional mixing. Gallium implantation produced no enhancement of the intermixing over unimplanted samples whilst krypton implantation produced a factor oftwo increase in the interdiffusion. Arsenic implantation produced a two step diffusion mechanism with a fast initialdiffusion(20 times unimplanted)and a steady state region similar to that observed with krypton implants. I.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William P. Gillin, Kevin P. Homewood, and Brian J. Sealy "Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wells", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636952
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