Growth and characterization of GaSb crystals: a promising optoelectronic material

P. Dutta; H. L. Bhat; K. S. Sangunni; Vikram Kumar

doi:10.1117/12.636971

16 December 1992 Growth and characterization of GaSb crystals: a promising optoelectronic material

P. Dutta, H. L. Bhat, K. S. Sangunni, Vikram Kumar

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636971
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Gallium Antimonide Crystals were grown by the vertical Bridgman technique. The crystals were characterized using Xray analysis EDAX Chemical Etching Hall Effect measurements Photoluminescence spectroscopy and Raman spectroscopy. I

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P. Dutta, H. L. Bhat, K. S. Sangunni, and Vikram Kumar "Growth and characterization of GaSb crystals: a promising optoelectronic material", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636971

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