16 December 1992 Growth and characterization of GaSb crystals: a promising optoelectronic material
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636971
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Gallium Antimonide Crystals were grown by the vertical Bridgman technique. The crystals were characterized using Xray analysis EDAX Chemical Etching Hall Effect measurements Photoluminescence spectroscopy and Raman spectroscopy. I
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Dutta, P. Dutta, H. L. Bhat, H. L. Bhat, K. S. Sangunni, K. S. Sangunni, Vikram Kumar, Vikram Kumar, } "Growth and characterization of GaSb crystals: a promising optoelectronic material", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636971; https://doi.org/10.1117/12.636971
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