16 December 1992 Growth and characterization of high quality strained GaAs Epitaxial Layers
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636814
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Iritum arxi antincny-dcped strain layers of GaAs grcn by liquid phase epitaxy are st3.ted hy phcal, electrical and cçtical techniques . Doping ranges to obtain lci dislocaticri dsity GaAs are assessed. Nz deep levels associat1 with irx1izn arx antinony dopants are identified by photocurrent technique, and their possible origins are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Dhar, Kanad Mallik, "Growth and characterization of high quality strained GaAs Epitaxial Layers", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636814; https://doi.org/10.1117/12.636814
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