16 December 1992 Growth and characterization of high quality strained GaAs Epitaxial Layers
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636814
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Iritum arxi antincny-dcped strain layers of GaAs grcn by liquid phase epitaxy are st3.ted hy phcal, electrical and cçtical techniques . Doping ranges to obtain lci dislocaticri dsity GaAs are assessed. Nz deep levels associat1 with irx1izn arx antinony dopants are identified by photocurrent technique, and their possible origins are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Dhar, S. Dhar, Kanad Mallik, Kanad Mallik, } "Growth and characterization of high quality strained GaAs Epitaxial Layers", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636814; https://doi.org/10.1117/12.636814
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