16 December 1992 Liquid phase epitaxial growth and characterization of III-V compound semiconductors
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.637279
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
In this article we describe the sali ent features of the classical LPE technique with special reference to A1GaAS and InGaAsP. We also review the work of very thin layers for quantum well structures.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. Arora, "Liquid phase epitaxial growth and characterization of III-V compound semiconductors", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.637279; https://doi.org/10.1117/12.637279
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