16 December 1992 Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992); doi: 10.1117/12.636908
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Silicon close contact rapid thermal annealing (RTA) behavior of heated Zn implants in lnP at low doses 5E11-1E12 ions/cm2 has been studied in the temperature range 800- 900C. Annealing at 800C for 1 0 seconds results in 90+ activation with acceptable profiles. At temperatures above 800C the implant profiles are considerably broadened and exhibit anomalous diffusion tails. The shape of the dopant profile and the position of the peak ion concentration are influenced by phosphorus out diffusion from the sample surface and bulk impurity redistribution du ring the activation process. RTA annealed Au/Zn/Au alloyed contacts were formed on the activated regions in the temperature range 350-450C and the contact resistivity was measured by the Transmission Line Method (TLM). A minimum contact resistivity of 24 xlO-3 a-cm was obtained for the sample annealed at 400C for 5 minutes. X- ray Photoelectro n Spectroscopy (XPS) depth profiles show significant Zn and Au in-diffusion into the substrate at 400C. I.
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C. S. Sundararaman, John F. Currie, "Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636908; https://doi.org/10.1117/12.636908
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KEYWORDS
Zinc

Annealing

Gold

Silicon

Chemical species

Diffusion

Phosphorus

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