16 December 1992 Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636835
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Luc, V. V. Luc, Petr Georgievich Eliseev, Petr Georgievich Eliseev, M. A. Man'ko, M. A. Man'ko, M. V. Tsotsoriya, M. V. Tsotsoriya, } "Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636835; https://doi.org/10.1117/12.636835
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