29 July 1992 Effect of fabrication techniques on photodiode performance under 1.06-um pulsed-laser irradiation
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Abstract
This research investigates the damage morphology and electrical performance of variously fabricated PIN photodiodes under single-pulse laser irradiation. Specially-ordered and industrial-standard photodiodes were irradiated with various fluences from a 10 ns Nd:YAG laser at 1064 nm. Morphological damage was defined as any residual surface damage observed at 200X magnification under a Normarski optical microscope. Electrical damage entailed any significant change in reverse bias current between the before and after laser-irradiated I-V curves. The electrical transient photocurrent was monitored and recorded for anomalous electrical response. It is presumed that the different fabrication processes will affect the electrical response of the photodiode. The photodiode sample sets differed from one another by the doping mechanism (ion implantation or planar diffusion), the crystallinity of the substrate prior to ion implantation (crystalline or amorphous), and the anneal or regrowth processing (furnace or rapid thermal anneal). All diodes were p+-n photodiodes produced by implanting boron into a high-resistivity, n-doped silicon substrate. The junction depth of all the diodes was between 0.5 and 1.2 micrometers .
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Austin L. Huang, Rodger M. Walser, Michael F. Becker, "Effect of fabrication techniques on photodiode performance under 1.06-um pulsed-laser irradiation", Proc. SPIE 1624, Laser-Induced Damage in Optical Materials: 1991, (29 July 1992); doi: 10.1117/12.60097; https://doi.org/10.1117/12.60097
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