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1 April 1992 Burstein-Moss shift in quantum-confined structures of nonlinear optical materials
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Proceedings Volume 1626, Nonlinear Optics III; (1992)
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
In this paper, an attempt is made to study the Burstein-Moss shift in quantum wells, quantum wires, quantum dots, magneto quantized, and magneto-size quantized-layers of nonlinear optical materials, by formulating the appropriate electron statistics. It is found, taking CdGeAs2 as an example, that the Burstein-Moss shift exhibits oscillations in terms of non- ideal Heaviside step functions for quantum wells, wires, and dots with respect to doping and film thickness respectively. The Burstein-Moss shift also exhibits various oscillations for the last two types of quantum confinement of band states with respect to electron statistics and quantizing magnetic field respectively. The variations depend essentially on the energy band structure of the materials and the simplified theoretical formulation is in agreement with experimental results given elsewhere.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kamakhya Prasad Ghatak "Burstein-Moss shift in quantum-confined structures of nonlinear optical materials", Proc. SPIE 1626, Nonlinear Optics III, (1 April 1992);

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