Paper
1 June 1992 Spectroscopic characterization of Nd-doped SrGdGa3O7 as a diode pumped laser host
Gregory J. Quarles, Leon Esterowitz, Gregg H. Rosenblatt, Mark H. Randles, John E. Creamer, Roger F. Belt
Author Affiliations +
Proceedings Volume 1627, Solid State Lasers III; (1992) https://doi.org/10.1117/12.60185
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
Single crystals of Nd(3+):SrGdGa3O7 (SGGM) have been grown and characterized as candidate crystals for improved diode pumped lasers. The width of the 809 nm absorption in this disordered oxide crystal is 8 nm FWHM. The fluorescence lifetime of the 4F3/2 - 4I11/2 transition at 1.06 micron is 245 microsec. Dopant levels of 4 percent Nd have been achieved while maintaining high optical quality material.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory J. Quarles, Leon Esterowitz, Gregg H. Rosenblatt, Mark H. Randles, John E. Creamer, and Roger F. Belt "Spectroscopic characterization of Nd-doped SrGdGa3O7 as a diode pumped laser host", Proc. SPIE 1627, Solid State Lasers III, (1 June 1992); https://doi.org/10.1117/12.60185
Lens.org Logo
CITATIONS
Cited by 8 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Crystals

Spectroscopy

Laser crystals

Absorption

Diodes

Luminescence

Back to Top