1 May 1992 Monolithic, photoconductive GaAs pulser and its radiated waveform
Author Affiliations +
Proceedings Volume 1631, Ultrawideband Radar; (1992); doi: 10.1117/12.59047
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
A monolithic, photoconductive impulse generating device, in which the functions of energy storage and switching are combined into a single semi-insulating GaAs wafer substrate, was investigated under various operating conditions. Depending on the load impedance, this new type of device produced nanosecond impulses with various pulse shapes. The operation of this device with a positively mismatched load impedance (50 ohm) resulted in output voltage enhancement (voltage gain factor of 2.0) as well as fast pulse risetime (260 ps). Further, an ultra-wideband horn antenna was excited by a output pulse from this device and its radiative waveform was measured using a B-dot sensor.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. H. Kim, Robert J. Zeto, Robert J. Youmans, Maurice Weiner, George T. Tran, Louis J. Jasper, Bogoliub Lalevic, "Monolithic, photoconductive GaAs pulser and its radiated waveform", Proc. SPIE 1631, Ultrawideband Radar, (1 May 1992); doi: 10.1117/12.59047; https://doi.org/10.1117/12.59047
PROCEEDINGS
11 PAGES


SHARE
KEYWORDS
Gallium arsenide

Switches

Antennas

Capacitors

Picosecond phenomena

Radar

Semiconducting wafers

Back to Top