The Bulk Optically Controlled Semiconductor Switch (BOSS) is based on GaAs doped with silicon and compensated with diffused copper. The BOSS device can be turned on with a laser pulse of one wavelength and turned off with a second laser pulse of a different wavelength. The resulting electrical pulse duration may be varied depending on the timing between the two, relatively short, laser pulses. Two factors that limit the lifetime of this photoconductive switch are the choice of contact gcometry/formulation, and the conductivity during the "on-state." Diffused copper forms several deep acceptor levels in GaAs:Si, and the two dominant levels are labeled CUA and CuB which are located 0.14 eV and 0.44 eV from the top of the valence band respectively. The BOSS switching concept relies on the CuB level, and therefore the CUA level is considered to be parasitic. The on-state conductivity of the switch can be enhanced by either maximizing the density of CUB acceptors through processing techniques, or by increasing the total donor/acceptor concentrations. The contact formulation must also be considered due to the high currents through these devices. The lifetimes of similar devices have been directly measured using an automated, high-current, pulse circuit. The following paper describes our recent progress related to the bulk processing of BOSS devices, contact geometry/formulations, and experimental lifetime studies.