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12 May 1992 Effects of doping on photoconductive switches as determined by electro-optic imaging
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59060
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
Using an electro-optic imaging system, we have measured the spatial and temporal structure of electric fields in photoconductive switches with four different contact configurations. Contacts with heavy doping under the metallization had the best performance. Modeling has verified these results.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Donaldson and Liyue Mu "Effects of doping on photoconductive switches as determined by electro-optic imaging", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59060
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