Paper
12 May 1992 Electroabsorption in high-power photoconductive switches
Hongen Shen, Robert A. Lux, Jagadeesh Pamulapati, Mitra B. Dutta, Robert J. Zeto
Author Affiliations +
Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59061
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
Photoconductive semiconductor switches are useful for the generation of high voltage electrical pulses with picosecond rise times. In addition, the availability of high power semiconductor laser arrays allows the elimination of large flash-lamp pumped solid state lasers. In this paper, the role of electro-absorption is investigated. A theoretical model has been formulated which combines measured field and wavelength dependent absorption data with a one dimensional drift and diffusion model. The results of the model indicate the existence of optimum parameters for both pump wavelength and pump intensity before a plateau of diminishing returns is achieved. The results along with a detailed explanation of the theoretical formalism is included in the paper.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongen Shen, Robert A. Lux, Jagadeesh Pamulapati, Mitra B. Dutta, and Robert J. Zeto "Electroabsorption in high-power photoconductive switches", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59061
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Cited by 2 scholarly publications.
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KEYWORDS
Absorption

Switches

Electrodes

Semiconductor lasers

Data modeling

Gallium arsenide

Switching

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