12 May 1992 Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59065
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
A process was developed for the fabrication of high power GaAs photoconductive switches with ohmic Ni/Ge/Au contact metallization in a lateral NIN switch configuration. The main features of the process were ion implanted silicon in the contact regions and rapid thermal processing for annealing the implants and alloying the metallization. A 50 mill dia. process wafer included 28 photolithographically defined switches of four different types to comparatively investigate the effects of ohmic contacts and switch dimensions on switch lifetime, together with monitors to characterize the ohmic contact process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert J. Zeto, Robert J. Zeto, Charles D. Mulford, Charles D. Mulford, Wayne H. Chang, Wayne H. Chang, A. M. Balekdjian, A. M. Balekdjian, Richard T. Lareau, Richard T. Lareau, S. N. Schauer, S. N. Schauer, Fred J. Zutavern, Fred J. Zutavern, Guillermo M. Loubriel, Guillermo M. Loubriel, } "Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59065; https://doi.org/10.1117/12.59065
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