12 May 1992 Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59066
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
A non-alloyed Pd/GeTFi/Pt ohmic contact for an n-GaAs has been investigated. The specific contact resistance was 4.7x10-7Ω.cm2 for an n-GaAs film which was doped to 2x1018 -3.Auger depth profile showed that the interface between the contact and n-GaAs was abrupt. There was almost no change of Auger depth profiles before and after the sample was put in the furnace for 20 hours at 300 °C in an N2 ambient Scanning electron microscopy showed that the contact surface was very smooth after a 400 °C , 15 second anneal. Auger depth profiles and contact resistance measurements showed that the contacts begin to deteriorate when the rapid thermal annealing time exceeds 35seconds.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weiyu Han, Weiyu Han, H. S. Lee, H. S. Lee, L. M. Casas, L. M. Casas, Kenneth A. Jones, Kenneth A. Jones, Robert J. Zeto, Robert J. Zeto, Charles D. Mulford, Charles D. Mulford, } "Nonalloyed Pd/Ge/Ti/Pt ohmic contact for the high-power optical switch", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59066; https://doi.org/10.1117/12.59066


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