12 May 1992 Optically activated switching in a ZnSe/GaAs heterostructure
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59071
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
A novel structure comprising a number of identical ZnSe/GaAs double heterostructures arranged in series to form a photoconductive switch for high voltages and for high-power frozenwave generation is described. The GaAs front the separate heterostructures are the only components interconnected to form the series arrangement. The switch has low dark current, low onresistance and high switching efficiency. The output characteristics is controllable by external electronic circuitry.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Donkor, Eric Donkor, } "Optically activated switching in a ZnSe/GaAs heterostructure", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59071; https://doi.org/10.1117/12.59071

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