12 May 1992 Recent advances in research on photoconductive power switching at the University of Maryland
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59074
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Two new circuit structures which exploit the properties of the fast opening GaAs photoconductive semiconductor switch are described. These new circuit structures, series current charged transmission lines, and dual of the Blumlein line, offer increased power output over our previous current charged transmission line circuit structure. In addition, the electrical and optical response of the poly-ZnSe switch under high applied electrical fields has been further investigated. Non-linear behavior is observed in the poly-ZnSe switch under high fields both experimentally and in numerical simulation. This type of non-linear behavior may be useful in high power opening switch applications as predicted by numerical simulation.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric E. Funk, Eric E. Funk, Pak Shing Cho, Pak Shing Cho, Chun C. Kung, Chun C. Kung, Eve A. Chauchard, Eve A. Chauchard, M. J. Rhee, M. J. Rhee, Ping-Tong Ho, Ping-Tong Ho, Julius Goldhar, Julius Goldhar, Chi Hsiang Lee, Chi Hsiang Lee, } "Recent advances in research on photoconductive power switching at the University of Maryland", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59074; https://doi.org/10.1117/12.59074

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