26 June 1992 2-ps RC product new SI-BH laser structure for far over 20-GHz operation
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We designed a new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InPlayers. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pP and the series resistance around 3 (RC product < 2 ps) of the laser structure was observed. Using this new structure a 1 .3 jtm bulk laser had a nicely smooth optical response with bandwidth in a large excess of 18GHz (our measurement limit). A fitting procedure, using the laser response transfer function, confirmed an neglecting RC product (2 ps), a power limited bandwidth of about 21 GHz and excellent RF modulation efficiency.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Kazmierski, Christophe Kazmierski, D. Robein, D. Robein, D. Mathoorasing, D. Mathoorasing, } "2-ps RC product new SI-BH laser structure for far over 20-GHz operation", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59143; https://doi.org/10.1117/12.59143

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