3 um InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

Raymond J. Menna; David R. Capewell; Ramon U. Martinelli; Pamela K. York; Ronald E. Enstrom

doi:10.1117/12.59134

26 June 1992 3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

Raymond J. Menna, David R. Capewell, Ramon U. Martinelli, Pamela K. York, Ronald E. Enstrom

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59134
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were grown by organometallic vapor-phase epitaxy.

Citation Download Citation

Raymond J. Menna, David R. Capewell, Ramon U. Martinelli, Pamela K. York, and Ronald E. Enstrom "3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59134

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available