26 June 1992 Application of metal-organic chemical vapor deposition to vertical-cavity surface-emitting lasers
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We have successfully used low-pressure metal-organic chemical vapor deposition (LP-MOCVD) to grow GaAs/A1GaAs vertical-cavity surface-emitting lasers containing graded-index distributed Bragg reflector (DBR) mirrors. The continuously-graded mirror heterojunctions were obtained by maintaining a constant growth temperature while ramping the reactant gas flows. Graded interfaces were found to reduce the energy-band discontinuities, resulting in improved electrical charteristics. A 35 p.m diameter device has a series resistance of 22 , a CW output power of 2 mW, a threshold current density of 1.2 kA/cm2, an overall power efficiency of 3.0%, and a turn-on voltage of 2.3 V.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric A. Armour, Eric A. Armour, Shang Zhu Sun, Shang Zhu Sun, David P. Kopchik, David P. Kopchik, Kang Zheng, Kang Zheng, Ping Zhou, Ping Zhou, Julian Cheng, Julian Cheng, Christian F. Schaus, Christian F. Schaus, "Application of metal-organic chemical vapor deposition to vertical-cavity surface-emitting lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59171; https://doi.org/10.1117/12.59171

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