26 June 1992 Characteristics and reliability of high temperature strained quantum well lasers
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Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992); doi: 10.1117/12.59166
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
InGaAs/GaAs strained-layer quantum well lasers have been successfully demonstrated for very high temperature CW operation up to 200 C. The lasers show promising reliability data at 70 C, 100 C, and 125 C and high output power of about 300 mW with a 3-micron ridge-waveguide structure.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Shain Hong, Richard J. Fu, Luis Figueroa, "Characteristics and reliability of high temperature strained quantum well lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59166; https://doi.org/10.1117/12.59166
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KEYWORDS
Semiconductor lasers

Reliability

Laser applications

Quantum wells

Continuous wave operation

Aerospace engineering

Laser damage threshold

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