26 June 1992 Design of InGaAs strained quantum-well lasers for high-temperature operation
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The effect of high temperature on the threshold gain and threshold current density of an InGaAs (GaAs based) strained quantum well laser is examined both theoretically and experimentally. It is shown that designing a quantum well laser for low threshold gain through the use of a long laser cavity and/or high reflectivity facet coatings will reduce the temperature induced threshold current increase. This result is related to the nonlinear dependence of quantum well gain and current density on carrier density. The high temperature characteristics of strained InGaAs and GaAs QWs are also compared.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pamela L. Derry, Pamela L. Derry, Richard J. Fu, Richard J. Fu, Chi-Shain Hong, Chi-Shain Hong, Eric Y. Chan, Eric Y. Chan, K. Chiu, K. Chiu, Harold E. Hager, Harold E. Hager, Luis Figueroa, Luis Figueroa, } "Design of InGaAs strained quantum-well lasers for high-temperature operation", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59169; https://doi.org/10.1117/12.59169

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