26 June 1992 Device-degradation phenomena in III-V semiconductor lasers and LEDs
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Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992); doi: 10.1117/12.59140
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
The current status and understanding of various degradation phenomena in III-V optoelectronic devices are discussed, with special consideration given to semiconductor lasers and light emitting diodes fabricated from GaAlAs/GaAs, InGaAsP/InP, and InGaAsP/InGaP/GaAd double-heterostructure materials. Three major degradation phenomena are discussed: rapid degradation, gradual degradation, and catastrophic failure. For each type of these degradation phenomena, methods for eliminating degradation are proposed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Ueda, "Device-degradation phenomena in III-V semiconductor lasers and LEDs", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59140; https://doi.org/10.1117/12.59140
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KEYWORDS
Light emitting diodes

Crystals

Semiconductor lasers

Optical components

Mirrors

Electroluminescence

Diodes

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