The current status and understanding of various degradation phenomena in III-V optoelectronic devices are discussed, with special consideration given to semiconductor lasers and light emitting diodes fabricated from GaAlAs/GaAs, InGaAsP/InP, and InGaAsP/InGaP/GaAd double-heterostructure materials. Three major degradation phenomena are discussed: rapid degradation, gradual degradation, and catastrophic failure. For each type of these degradation phenomena, methods for eliminating degradation are proposed.
"Device-degradation phenomena in III-V semiconductor lasers and LEDs", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59140; https://doi.org/10.1117/12.59140